Quality Inspection Report: Electrical Transport Properties Measurement System

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DX-3000S3 electrical transport property measurement system

DX-3000S3 electrical transport property measurement system

 

Main function

 

Hall effect, magnetoresistance, and I-V characteristics can be tested under different magnetic fields.

Measurable parameters:

◆ Hall effect: sheet resistance, resistivity, Hall coefficient, conductivity type, Hall mobility, carrier concentration;
◆ Magnetoresistance: sheet resistance, resistivity;
◆ I-V characteristics: I-V characteristic curve, R-B curve, R-T curve.

Testable materials:

◆ Semiconductor materials: Si, Ge, GaN, AlGaAs, CdTe, HgCdTe;
◆ ferrite materials;
◆ Low resistance materials: metals, transparent oxides, weakly magnetic semiconductors, TMR materials.

 

 

Main technical parameters

 

◆ Magnetic induction intensity: 2.6T@10mm;
◆ Resistance range: 0.1mΩ~10MΩ;
◆ Current measurement: ±10pA~±1.05A (10pA is the minimum resolution);
◆ Voltage measurement: ±1nV~±100V (±1nV is the minimum resolution);
◆ Current source: ±50pA~±1A (±1.05A@+21V, ±105mA@+210V)
◆ Resistivity: 5×10-9 ~ 5×102Ω·cm;
◆ Migration rate: 1~1×106 cm2/vs;
◆ Carrier concentration: 6×1012~6×1023cm-3;
◆ Hall coefficient: ±1×10-5~±1×108cm3/C;
◆ 4K-325K, ±0.1K.

 

 


 

electromagnet magnetic field 2.6T@10mm maximum magnetic induction intensity test

2.6T@10mm maximum magnetic induction intensity test

 

Resistance test

 

Resistance test 0.57mΩ , 10MΩ, InAs

0.57mΩ , 10MΩ, InAs

 

Small resistance test: 0.57mΩ measurement stability

Small resistance test: 0.57mΩ measurement stability

 

Large resistance test: 10MΩ measurement stability

Large resistance test: 10MΩ measurement stability

 

Room temperature sample rod InAs Hall test

 

Current

(mA)

Thiness

(cm)

Field

(kG)

Temperature

(K)

Resistivity(Ω*cm)

Hall coefficient

(cm3*c-1)

Carrier density

(cm-3)

Mobility

(cm2*v-1*s-1)

PN type

1

0.01

1

287.56308

4.162370E+00

-1.776770E+04

3.512813E+14

4.268650

E+03

N

1

0.01

2

287.564972

4.135819E+00

-1.777437E+04

3.511495E+14

4.297666

E+03

N

1

0.01

3

287.563965

4.138581E+00

-1.778881E+04

3.508645E+14

4.298286

E+03

N

1

0.01

4

287.564575

4.165817E+00

-1.780750E+04

3.504961E+14

4.274672

E+03

N

1

0.01

5

287.563568

4.146999E+00

-1.783298E+04

3.499954E+14

4.300213

E+03

N

1

0.01

6

287.564636

4.181114E+00

-1.786153E+04

3.494360E+14

4.271954

E+03

N

1

0.01

7

287.567078

4.187685E+00

-1.789440E+04

3.487940E+14

4.273102

E+03

N

1

0.01

8

287.571533

4.195337E+00

-1.793039E+04

3.480940E+14

4.273886

E+03

N

1

0.01

9

287.572113

4.203570E+00

-1.797071E+04

3.473130E+14

4.275106E+03

N

1

0.01

10

287.571259

4.212589E+00

-1.801278E+04

3.465018E+14

4.275940E+03

N

 

Room temperature InAs Hall test: resistivity Room temperature InAs Hall test: hall coefficient

 

Room temperature InAs Hall test: carrier density Room temperature InAs Hall test: mobility

 

Cryostat InAs Variable Temperature Hall Test

 

Current

(mA)

Thiness

(cm)

Field

(kG)

Temperature(K)

Resistivity

(Ω*cm)

Hall coefficient

(cm3*c-1)

Carrier density

(cm-3)

Mobility

(cm2*v-1*s-1)

PN type

1

0.01

10

3.976403

5.788794E+00

-2.346665

E+04

2.659715

E+14

4.053807

E+03

N

1

0.01

10

9.936896

5.895913E+00

-2.378621

E+04

2.623983

E+14

4.034355

E+03

N

1

0.01

10

29.971308

5.653729E+00

-2.330250

E+04

2.678451

E+14

4.121616

E+03

N

1

0.01

10

60.012272

4.802939E+00

-2.326180

E+04

2.683137

E+14

4.843244

E+03

N

1

0.01

10

100.068024

3.998614E+00

-2.296610

E+04

2.717683

E+14

5.743516

E+03

N

1

0.01

10

150.077957

3.717721E+00

-2.170047

E+04

2.876186

E+14

5.837037

E+03

N

1

0.01

10

200.08226

3.920357E+00

-2.083140

E+04

2.996178

E+14

5.313650

E+03

N

1

0.01

10

250.074219

4.084289E+00

-1.929929

E+04

3.234037

E+14

4.725249

E+03

N

1

0.01

10

300.065338

4.292155E+00

-1.814301

E+04

3.440146

E+14

4.227016

E+03

N

1

0.01

10

325.057251

4.480245E+00

-1.790612

E+04

3.485658

E+14

3.996683

E+03

N

 

Cryostat InAs Hall test: resistivity Cryostat InAs Hall test: hall coefficient

 

Cryostat InAs Hall test: carrier density Cryostat InAs Hall test: mobility

 

 

Cooling and temperature control process of cryostat

 

283K to 4K takes about 1 hour

283K to 4K takes about 1 hour

Temperature control process, no obvious overshoot

Temperature control process, no obvious overshoot

4K temperature control curve, stability within ±0.1K

4K temperature control curve, stability within ±0.1K

10K temperature control curve, stability within ±0.1K

10K temperature control curve, stability within ±0.1K

30K temperature control curve, stability within ±0.1K

30K temperature control curve, stability within ±0.1K

60K temperature control curve, stability within ±0.1K

60K temperature control curve, stability within ±0.1K

100K temperature control curve, stability within ±0.1K

100K temperature control curve, stability within ±0.1K

150K temperature control curve, stability within ±0.1K

150K temperature control curve, stability within ±0.1K

200K temperature control curve, stability within ±0.1K

200K temperature control curve, stability within ±0.1K

250K temperature control curve, stability within ±0.1K

250K temperature control curve, stability within ±0.1K

300K temperature control curve, stability within ±0.1K

300K temperature control curve, stability within ±0.1K

325K temperature control curve, stability within ±0.1K

325K temperature control curve, stability within ±0.1K

 

 

PID setting

 

PID setting