Pyriform Double Chambers Magnetron Sputtering System
Composition
The system mainly consists of the main sputtering vacuum chamber, magnetron sputtering target, substrate water-cooling heat revolution plate, sample injection chamber, sample chamber, annealing furnace, backwash target, magnetic sample presentation institution, working gas circuit, pumping system, installation cabinet, vacuum measurement and electronic control system.
Technical Index
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Model |
DXJ-560S |
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Main Sputtering Vacuum Chamber |
Pyriform sputtering vacuum chamber, size: Ø560*350mm |
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Sample Injection Chamber, |
Cylindrical and horizontal, size: Ø250*420mm |
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Configuration of Vacuum System |
The main sputtering chamber and sample injection chamber depend on the independent molecular pump and mechanical pump units exhaust. |
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Ultimate Pressure |
Main Sputtering Chamber |
6.67*10-6Pa (after bake and degassing) |
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Sample Injection |
≤6.67*10-4Pa (after bake and degassing) |
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Time of Recovery Vacuum |
Main Sputtering Chamber |
Reach 6.6*10-4Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) |
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Sample Injection |
Reach 6.6*10-3Pa in 40 mins ( expose in air for short time and inflate dry chlorine and then begin air exhaust) |
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Component of Permanent Magnetron Sputtering Targets |
Five permanent targets, target size: Ø60mm (One among them could sputter magnetic material.) Radio sputtering of each target and direct current sputtering are compatible. The distance between target and sample is 40-80mm, which is adjustable. |
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Substrate Water-cooling Heat Revolution Plate |
Substrate Structure |
6 stations and one for installation of heating furnace other for water cooling substrate plate |
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Sample Size |
Ø30. It could accept 6 pieces |
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Mode of Motion |
0-360°back and front rotating |
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Heat |
MAX. heat temperature of substrate 600℃±1℃ |
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Negative Substrate Bias |
-200V |
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Air Circuit System |
Quality flow controller 2 channel |
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Configuration of Sample Injection Chamber |
Module of Sample Chamber |
It could install 6 pieces samples one time. |
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Module of Annealing |
MAX. heat temperature for substrate: 800℃±1℃ |
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Module of Backwash Target |
It applies for backwashing of substrate. |
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Magnetic Sample Presentation Institution, |
It is applies for the taking and sending of sample from sputtering chamber and sample injection chamber. |
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Computer Control System |
Control the rotation of sample, open of baffle and confirmation of target place |
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Floor Space |
Mainframe |
2600*900mm2 |
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Electric Control Cabinet |
700*700mm2(2 sets) |
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