Single Atomic Layer Film Growing Equipment
Introduction
Atomic Layer Deposition is a method for film preparation, that could precisely control the thickness of film. It could achieve the deposition of metal, oxide, carbide (N, S Si), various semiconductor materials and superconductor materials. The operation of equipment is easy and reliable and the test parameter is flexible, which could meet the requirements for complicated evenly coated film material of colleges and scientific institutions.
Technical Index
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Ultimate Vacuum |
5Pa |
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Whole Vacuum Leak Rate |
＜10-8Pa.l/s |
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Vacuum Chamber |
Vacuum Cavity |
argon arc welding stainless steel material and upper lifted cover structure |
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Bottom Exhaust Port |
Connect vacuum dry pump |
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Substrate Heater |
Outer heating system, room temperature~500℃， continuous and adjustable |
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Size of Substrate. |
Ø50-100mm |
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Uniformity of Film Thickness |
As for Ø100mm elements ZnO film, the uniformity thickness of film is less than ±1%. |
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ALD Working Gas Transport Control Gas Circuit |
Liquid Source Gas Circuit |
Customized |
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Gas Source Gas Circuit |
Customized |
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Vacuum Exhaust System |
Bilateral Oil Free Dry Vacuum Pump |
1 set |
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Vacuum Pipeline |
1 set |
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Vacuum Monitor |
Prani Gauge |
Measuring range: 1.0*105 Pa-3*10-2 pa |
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Date Collection Record and Human-Computer Interface |
1 set |
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Computer Control System |
Sample Heating Power Supply |
1 set |
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Magnetic |
1 set |
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Main Control Power Supply |
1 set |
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Installation Machine |
Steel material welding, mask quick release. Trundles can be fixed and can be moved. |
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Size of Equipment (length*width*height) |
600*600*1200mm |
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