Silicon Carbide Crystal Growth Furnace

Product Overview:

It is mainly composed of furnace chamber components, upper furnace chamber components, sample support mechanism, temperature measuring window transmission components, vacuum acquisition and measurement system, gas system, water system, induction heating system, automatic control system, etc. The equipment structure design is required to be stable, the operation is stable, and there are multiple safety protection facilities. The mass flow and temperature control are accurate. The entire crystal growth process is controlled by a highly reliable programmable computer controller (PCC), and the process can be fully automatically (CCD) controlled and information recorded.

Vacuum chamber structure:
The growth chamber adopts quartz tube structure, the upper and lower sealing flanges of the quartz tube are made of 316L material, the surface is treated with special process, and the imported fluororubber ring is used for sealing

Vacuum chamber size:
Quartz cavity specifications: inner diameter 400mm, height 1100mm

Ultimate vacuum degree:
≤6.6E-5pa (cold state, empty furnace)

Deposition source:
Ultimate vacuum degree: ≤6.6×10-5pa (cold state, empty furnace) System vacuum leak detection rate: The leak detection rate of the quartz cavity is ≤5.0×10-7 Pa.l/S 12-hour pressure-maintaining vacuum index: ≤5Pa (cold empty furnace) Quartz chamber specifications: inner diameter 400mm, height 1100mm Grown crystal diameter: can grow 6 inches Crystal growth control.

Sample size, temperature:
6 inches

Footprint (length x width x height):
Installation site area greater than 12㎡, site height not less than 4.5m

Electrical control description:
Adopt computer control system and touch screen display. The whole process of crystal growth is intuitively displayed, with strong interactivity; with automatic crystal growth control system.