Hall Effect Measurement System

The Hall effect is the production of a potential difference (the Hall voltage) across an electrical conductor that is transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in 1879.

The essence of the Hall effect: When the carriers in the solid material move in the applied magnetic field, the trajectory shifts due to the Lorentz force, and charge accumulation occurs on both sides of the material, forming an electric field perpendicular to the current direction; Finally, the Lorentz force of the carrier is balanced with the electric field repulsion, thus establishing a stable potential difference on both sides, that namely the Hall voltage.

High and low temperature hall effect measurement system

 

Physical parameters

Carrier concentration

 10³cm⁻³ - 10²³cm⁻³
Mobility 0 .1 cm²/ volt*sec - 10⁸cm²/ volt*sec

Resistivity range

 10⁻⁷ Ohm*cm - 10¹² Ohm*cm
Hall voltage 1 uV - 3V

Hall coefficient

 10⁻⁵ - 10²⁷cm³/ C
Testable material type Semiconductor material SiGe, SiC, InAs, InGaAs, InP,AlGaAs, HgCdTe and ferrite materials etc.
low resistance material Graphene, metals, transparent oxides, weakly magnetic semiconductor materials, TMR materials, etc.
high resistance material Semi-insulating GaAs, GaN, CdTe, etc.
Material Conductive Particles Type P and Type N testing of materials
Electrical parameters Current  source 50.00nA- 50.00mA
Current source resolution 0.0001uA
Measuring voltage 0 ~ ±3V
Voltage measurement resolution 0.0001 mV
Other Accessories Shading Extern ally installed light-shielding parts make the test material more stable
Sample size Maximum 10mm * 10mm
Box cabinet 600*600*1000mm
Test piece Hall effect of Institute of Semiconductors, Chinese Academy of  Sciences Standard  test samples and data: 1 set
(Si, Ge, GaAs, lnSb)
Making ohmic contacts Electric soldering iron, indium chip, solder, enameled wire, etc.
One-button automatic measurement can be performed without the need for human operation after the test is started
Software can perform I-V curve and BV curve
Set in software for  automatic temperature measurement
The experimental results are measured, and the data will be temporarily saved in the software. If long-term storage is required, the data can be exported to an EXCEL table to facilitate later data processing.
Provide the Hall effect standard test samples and data of the Institute of Semiconductors, Chinese Academy of Sciences: 1 set

Test Sample Display for Hall Effect Measurement System

The Hall effect instrument system consists of an electromagnet, electromagnet power supply, high precision constant current source, high precision voltmeter, Hall effect sample holder, high and low-temperature controller, standard sample, and system software.

DX-30
NMR series permanent magnet
500mT (The pole pitch is 18mm)
DX-50
Variable electromagnet
1070mT (The pole pitch is 10mm); 687mT (The pole pitch is 20mm);
500mT (The pole pitch is 30mm); 378mT (The pole pitch is 40mm);
293mT (The pole pitch is 50mm).
DX-80
Variable electromagnet
2000mT (The pole pitch is 10mm); 1500mT (The pole pitch is 20mm);
1000mT (The pole pitch is 30mm); 800mT (The pole pitch is 40mm).
DX-100
Variable electromagnet
2000mT (The pole pitch is 10mm); 1500mT (The pole pitch is 20mm);
1000mT (The pole pitch is 30mm); 800mT (The pole pitch is 40mm);
600mT (The pole pitch is 40mm) Resolution: 0.1Gs.
Uniform area: 1%
The electromagnet of relevant magnetic size can be customized
System model Test temperature zone System Test Index
DX-100 High and Low Temperature Hall Effect Test System 80K ~ 500K (high and low temperature, temperature adjustment 0.1K) Minimum resolution: 0.1GS
Sample current: 0.05uA～50mA (adjust 0.1nA)
Magnetic field: 2T at 10mm spacing; 1T at 30mm spacing
Resistivity range: 10-5～107 Ohm*cm Carrier concentration: 103～1023cm-3
Mobility: 0.1～108cm2/volt*sec
Resistance range: 10m Ohms～6MOhms
DX-100H High-Temperature Hall Effect Test System 300K ～ 500K (high temperature, temperature adjustment 0.1K)
DX-100L Low-Temperature Hall Effect Test System 80K ～ 300K (low temperature, temperature adjustment 0.1K)
DX-200L Low-Temperature Hall Effect Test System 4K ～ 300K (low temperature, temperature adjustment 0.1K)
DX-500 High and Low Temperature Hall Effect Test System 80K ~ 800K (high and low temperature, temperature adjustment 0.1K)
DX-500H High-Temperature Hall Effect Test System 300 K ~ 800 K (high temperature, temperature adjustment 0.1K)

Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe and ferrite materials, etc.
Low impedance material: metal, transparent oxide, weak magnetic semiconductor materials, TMR material, etc.
High impedance material: Semi-insulating GaAs, GaN, CdTe, etc.

What is the Hall effect Measurement System used to measure?

The hall effect measurement system is used to measure the Bulk Carrier Concentration, Sheet Carrier Concentration, Mobility, Resistivity, Hall Coefficient, Magnetoresistance, etc. of Hall elements.

Testable materials of hall effect measurement system:

Working Principle of hall effect measurement system:

The components of DX hall effect measurement instrument:

The components of DX Hall Effect Measurement System

The motion of charge carriers in a Hall element under a magnetic field(a. electrons  b. holes)

Introduction of DX Hall Effect Measurement System

Pictures of High and low temperature hall measurement system:

The parameters of DX hall effect measurement equipment:

The magnetic field environment of DX hall effect apparatus:

The high and low temperature selection of DX hall effect device:

The CE Certificate of DX hall effect system:

The software interface of DX Hall Effect Measurement System:

Sample Stage of DX hall effect measurement system

Customization is available, please let us know your requirements, and we will design a professional plan for you. Thank you!

Dexinmag® • 2024

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